document number: 83774 for technical questions, contact: sensorstechsupport@vishay.com www.vishay.com rev. 1.5, 17-aug-09 1 matched pairs of emitters and detectors tczt8020 vishay semiconductors description the tczt8020 include matched infrared emitters and phototransistors in leaded packages, used to assemble custom-designed transmissive sensors or reflective sensors. the phototransistor package blocks visible light. features ? package type: leaded ? detector type: phototransistor ? dimensions (l x w x h in mm): 4.4 x 2 x 3 ? typical output cu rrent under test: i c = 0.5 ma ? daylight blocking filter ? emitter wavelength: 950 nm ? angle of half intensity: ? = 25 ? s420p: single detector component ? v420p: single emitter component ? lead (pb)-free soldering released ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? custom-design sensors for various distances ? reflective sensors ? transmissive sensors note (1) conditions like in table bas ic characteri stics/coupler note (1) moq: minimum order quantity 96 12317_1 product summary part number gap width (mm) typical output current under test (1) (ma) daylight blocking filter integrated tczt8020 variable 0.5 yes ordering information ordering code packaging volume (1) remarks tczt8020 bulk moq: 2000 pairs, 1000 pcs/bulk detectors and emitters in separate bulk absolute maximum ratings (1) parameter test condition symbol value unit coupler ambient temperature range t amb - 55 to + 85 c storage temperature range t stg - 55 to + 100 c soldering temperature distance to package 2 mm, t 5 s t sd 260 c input (emitter) reverse voltage v r 6v forward current i f 60 ma forward surge current t 10 s i fsm 1a power dissipation t amb 25 c p v 100 mw junction temperature t j 100 c output (detector) collector emitter voltage v ceo 70 v emitter collector voltage v eco 7v
www.vishay.com for technical questions, contact: sensorstechsupport@vishay.com document number: 83774 2 rev. 1.5, 17-aug-09 tczt8020 vishay semiconductors matched pairs of emit ters and detectors note (1) t amb = 25 c, unless otherwise specified absolute maximum ratings fig. 1 - power dissipation limit vs. ambient temperature note (1) t amb = 25 c, unless otherwise specified (2) characteristics are measurement with d = 4 mm (0.55") distance between emitter and detector, within a common axis of 0.5 mm (0. 02") and with parallel alignment within 5 output (detector) collector current i c 50 ma collector peak current t p /t = 0.5, t 10 ms i cm 100 ma power dissipation t amb 25 c p v 150 mw junction temperature t j 100 c absolute maximum ratings (1) parameter test condition symbol value unit 0 20 40 60 8 0 100 120 140 160 1 8 0 200 0 p - total po w er dissipation ( m w ) t am b - am b ient tem p erat u re ( c ) 96 11947 phototransistor ir-diode 100 75 50 25 basic characteristics (1) parameter test condition symbol min. typ. max. unit coupler collector current v ce = 5 v, i f = 20 ma, d = 4 mm (2) i c 0.25 0.5 ma i c /i f v ce = 5 v, i f = 20 ma, d = 4 mm ctr 1.25 2.5 % collector emitter saturation voltage i f = 20 ma, i c = 25 a v cesat 0.4 v cut-off frequency i f = 10 ma, v ce = 5 v, r l = 100 f c 110 khz input (emitter) forward voltage i f = 50 ma v f 1.25 1.6 v radiant intensity i f = 60 ma, t p = 20 ms i e 7.8 mw/sr peak wavelength i f = 100 ma p 940 nm virtual source diameter din en iso 1146/1:2005 d 1.1 mm output (detector) collector emitter voltage i c = 1 ma v ceo 70 v emitter collector voltage i e = 100 a v eco 7v collector dark current v ce = 25 v, i f = 0 a, e = 0 lx i ceo 100 na switching characteristics turn-on time v s = 5 v, i c = 1 ma, r l = 100 (see figure 10) t on 15 s turn-off time v s = 5 v, i c = 1 ma, r l = 100 (see figure 10) t off 10 s
document number: 83774 for technical questions, contact: sensorstechsupport@vishay.com www.vishay.com rev. 1.5, 17-aug-09 3 tczt8020 matched pairs of em itters and detectors vishay semiconductors basic characteristics t amb = 25 c, unless otherwise specified fig. 2 - forward current vs. forward voltage fig. 3 - relative current transfer ratio vs. ambient temperature fig. 4 - collector dark current vs. ambient temperature fig. 5 - collector curre nt vs. forward current fig. 6 - collector current vs. collector emitter voltage fig. 7 - current transfer ratio vs. forward current 0.1 1 10 100 1000 0 v f - for w ard v oltage ( v ) 96 11 8 62 i f - for w ard c u rrent (ma) 1.6 0.2 1.4 1.2 1.0 0. 8 0.6 0.4 2.0 1. 8 - 25 0 0.5 1.0 1.5 2.0 c tr - relati v e c u rrent transfer ratio rel t am b - am b ient tem p erat u re ( c ) 95 11097 v ce = 5 v i f = 20 ma d = 4 mm 75 50 25 0 0 1 10 100 1000 10 000 i - collector dark c u rrent (na) ceo t am b - am b ient temperat u re (c) 95 11090 v ce = 25 v i f = 0 a 100 75 50 25 0.1 0.001 0.01 0.1 10 i - collector c u rrent (ma) c i - for w ard c u rrent (ma) f 95 11111 1 v ce = 5 v d = 4 mm 100 10 1 0.1 0.01 0.1 1 10 v - collector emitter v oltage ( v ) c e 95 11112 i - c ollector c u rrent (ma) c d = 4 mm 5 ma 2 ma i f = 50 ma 20 ma 10 ma 100 10 1 0.1 0. 1 1 10 100 ctr - c u rrent transfer ratio ( % ) i - for w ard c u rrent (ma) f 95 11114 v ce = 5 v d = 4 mm 100 10 1
www.vishay.com for technical questions, contact: sensorstechsupport@vishay.com document number: 83774 4 rev. 1.5, 17-aug-09 tczt8020 vishay semiconductors matched pairs of emit ters and detectors fig. 8 - turn on/off time vs. forward current fig. 9 - collector current vs. distance fig. 10 - pulse diagram fig. 11 - switching times package dimensions in millimeters 0 i - collector c u rrent (ma) c 95 11104 t off t on 0 5 10 15 20 n on sat u rated operation v s = 5 v r l = 100 d = 4 mm t /t - t u rn on/t u rn off time ( s) on off 10 8 6 4 2 0 0.01 0.1 1 10 i - collector c u rrent (ma) c d - distance (mm) 95 11115 d v ce = 5 v i f = 20 ma t am b = 25 c 10 6 4 2 8 channel i channel ii + 5 v i f 0 95 10 8 46 r g = 50 t p t p = 50 s t = 0.01 i c = 1 ma; adj u sted b y i 50 100 oscilloscope r l 1m c l 20 pf i f f t p t t 0 0 10 % 90 % 100 % t r t d t on t s t f t off i f i c t p p u lse d u ration t d delay time t r rise time t on (= t d + t r ) t u rn-on time t s storage time t f fall time t off (= t s + t f )t u rn-off time 96 1169 8 detector ( b lack) dimensions like emitter package dra w ing- n o.: 6.544-52 8 4.01-4 iss u e: 2; 10.11.9 8 96 12106
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
